(China (Mainland))
Product Summary
The NAND01GW3B2CN6F is a 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory. It uses NAND cell technology. The device ranges from 1 Gbit to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width. This interface reduces the pin count and makes the NAND01GW3B2CN6F possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles. The NAND01GW3B2CN6F features a Write Protect pin that allows performing hardware protection against program and erase operations. The NAND01GW3B2CN6F also features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active.
Parametrics
NAND01GW3B2CN6F absolute maximum ratings: (1)Temperature Under Bias, TBIAS: -50 to 125℃; (2)Storage Temperature, TSTG: -65 to 150℃; (3)Input or Output Voltage, VIO: -0.6 to 4.6 V; (4)Supply Voltage, VDD: -0.6 to 4.6V.
Features
NAND01GW3B2CN6F features: (1)High Density NAND Flash memories; (2)NAND interface; (3)Supply voltage: 1.8V/3.0V; (4)Page size; (5)Block size; (6)Page Read/Program; (7)Copy Back Program mode; (8)Cache Program and Cache Read modes; (9)Fast Block Erase: 2ms (typ); (10)Status Register; (11)Electronic Signature; (12)Chip Enable do not care; (13)Serial Number option; (14)Data protection; (15)Data integrity; (16)ECOPACK packages; (17)Development tools.
Diagrams
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 NAND R |
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Negotiable |
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NAND S |
Other |
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Negotiable |
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NAND01G-A |
Other |
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Negotiable |
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NAND01G-AAZ3E |
Other |
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Negotiable |
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NAND01G-B |
Other |
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Negotiable |
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NAND01G-B2B |
Other |
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Negotiable |
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